Sign Up to like & get
recommendations!
1
Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618040176
Abstract: It is demonstrated theoretically that the interaction of gapped 2D materials (gapped graphene and transition metal dichalchogenide monolayers) with a strong high-frequency electromagnetic field (dressing field) crucially changes the band structure of the materials. As…
read more here.
Keywords:
engineering gapped;
gapped materials;
field;
dressing field ... See more keywords
Sign Up to like & get
recommendations!
0
Published in 2018 at "Semiconductors"
DOI: 10.1134/s1063782618140130
Abstract: We demonstrate theoretically that the interaction of quantum rings with a high-frequency off-resonant electromagnetic field (dressing field) substantially renormalizes their electronic properties. Particularly, it is shown that a linearly polarized dressing field decreases the spin…
read more here.
Keywords:
high frequency;
electromagnetic field;
field;
quantum rings ... See more keywords