An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method
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DOI: 10.1109/jeds.2019.2962007
Abstract: To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device’s breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV)… read more here.
Keywords: drift doping; doping profile; voltage; soi ... See more keywords