Sign Up to like & get
recommendations!
0
Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4993201
Abstract: This letter reports the implementation of double-drift-layer (DDL) design into GaN vertical Schottky barrier diodes (SBDs) grown on free-standing GaN substrates. This design balances the trade-off between desirable forward turn-on characteristics and high reverse breakdown…
read more here.
Keywords:
drift;
low turn;
power;
drift layer ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2019 at "AIP Advances"
DOI: 10.1063/1.5087491
Abstract: Vertical Schottky barrier diodes (SBD) with different drift-layer thicknesses (DLT) of GaN up to 30 μm grown by metalorganic chemical vapour deposition (MOCVD) were fabricated on free-standing GaN grown by hydride vapour phase epitaxy (HVPE).…
read more here.
Keywords:
schottky barrier;
free standing;
barrier diodes;
drift layer ... See more keywords
Sign Up to like & get
recommendations!
1
Published in 2018 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2018.2819681
Abstract: Low on-resistance 4H-SiC reverse-blocking (RB) metal–oxide–semiconductor field-effect transistors (MOSFETs) have been developed by adopting a non-punch-through (NPT) drift layer in order to suppress the punch-through (PT) current under the reverse-blocking condition. The n-type NPT drift…
read more here.
Keywords:
reverse blocking;
tex math;
drift layer;
inline formula ... See more keywords
Sign Up to like & get
recommendations!
2
Published in 2022 at "Micromachines"
DOI: 10.3390/mi13081185
Abstract: A normally-off β-Ga2O3 metal-oxide-semiconductor field-effect transistor (MOSFET) is proposed using a technology computer-aided design (TCAD) device simulation, which employs an epitaxial drift layer grown on an n-type low-doped body layer. The low-doped body layer under…
read more here.
Keywords:
body layer;
epitaxial drift;
layer;
drift layer ... See more keywords