Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulations
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-018-1168-y
Abstract: A novel SOI LDMOS with p+ buried islands and p-top layer in the drift region (PBI SOI) is proposed in this letter. At off-state, the high potential is induced from the drain region to the… read more here.
Keywords: soi ldmos; buried islands; novel soi; drift region ... See more keywords
A novel superjunction lateral double-diffused MOS with segmented buried P-layer
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.01.019
Abstract: Abstract A novel superjunction (SJ) lateral double-diffused MOS (LDMOS) with charge compensation to obtain an ultralow specific on-resistance (Ron,sp) is proposed in this paper. Segmented Buried P-layer(SBP)SJ LDMOS introduces segmented buried P-layer between the drift… read more here.
Keywords: buried layer; segmented buried; layer; charge ... See more keywords
Investigation of characteristics and hot-carrier reliability of high-voltage MOS transistors with various doping concentrations in the drift region
Sign Up to like & getrecommendations! Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aaeb06
Abstract: The effect of doping concentration in the n− drift region on the characteristics and hot-carrier reliability in high-voltage n-type MOS transistors is investigated. Results show that a proper increase in the n− drift doping concentration… read more here.
Keywords: drift region; doping concentration; carrier; hot carrier ... See more keywords
Robust Compact Model of High-Voltage MOSFET’s Drift Region
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2022.3172599
Abstract: This brief presents a compact model to capture the major difference between high-voltage (HV) and low-voltage MOSFETs, i.e., the carrier velocity saturation effect in the drift region of HV MOSFETs. We discuss the numerical and… read more here.
Keywords: high voltage; voltage; model; compact model ... See more keywords