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Published in 2023 at "IEEE Access"
DOI: 10.1109/access.2023.3270261
Abstract: A GaN gate injection transistor (GIT) has great potential as a power semiconductor device. However, a GaN GIT has a diode characteristic at the gate-source, and a corresponding gate drive circuit is thus required. Several…
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Keywords:
drive circuit;
gate;
gate drive;
type ... See more keywords
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Published in 2025 at "IEEE Journal of Emerging and Selected Topics in Power Electronics"
DOI: 10.1109/jestpe.2025.3536033
Abstract: Silicon carbide (SiC) metal oxide semiconductor field effect transistors (MOSFETs) have a small short-circuit (SC) tolerance, making them prone to degradation and even damage. The major factors that influence SiC MOSFET degradation are studied in…
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Keywords:
circuit;
degradation;
novel gate;
drive circuit ... See more keywords
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Published in 2025 at "IEEE Transactions on Industrial Electronics"
DOI: 10.1109/tie.2024.3419263
Abstract: Multiport dc breaker (MP-CB) contains multiple fast vacuum switches (FVS) for long-term micro-operating losses, and usually only one FVS needs to operate when interrupting fault current. In existing MP-CB, the operating mechanism of each FVS,…
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Keywords:
circuit;
fast vacuum;
centralized drive;
drive circuit ... See more keywords