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Published in 2017 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2016.2573643
Abstract: This paper presents a high-temperature (HT) gate drive and protection circuit for Silicon–Carbide (SiC) power mosfets entirely built from commercial off-the-shelf HT discrete components. To estimate cost reduction, a brief comparison was made between the…
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Keywords:
gate drive;
temperature gate;
drive protection;
high temperature ... See more keywords