Advanced gate driving concepts and switching optimization for SiC semiconductors
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DOI: 10.1080/00051144.2024.2362525
Abstract: Silicon carbide (SiC) MOSFETS are increasingly favoured in power electronics for their improved properties compared to silicon-based counterparts, such as IGBTs. Their ability to operate at higher switching frequencies and execute faster switching transients is… read more here.
Keywords: gate driving; driving concepts; concepts switching; gate ... See more keywords