Electron Tomography Reveals the Droplet Covered Surface Structure of Nanowires Grown by Aerotaxy.
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DOI: 10.1002/smll.201801285
Abstract: For the purpose of functionalizing III-V semiconductor nanowires using n-doping, Sn-doped GaAs zincblende nanowires are produced, using the growth method of Aerotaxy. The growth conditions used are such that Ga droplets, formed on the nanowire… read more here.
Keywords: growth; surface; droplet covered; electron tomography ... See more keywords