The relationship between the Young’s modulus and dry etching rate of polydimethylsiloxane (PDMS)
Sign Up to like & getrecommendations! Published in 2019 at "Biomedical Microdevices"
DOI: 10.1007/s10544-019-0379-8
Abstract: Polydimethylsiloxane (PDMS) has been the pivotal materials for microfluidic technologies with tremendous amount of lab-on-a-chip devices made of PDMS microchannels. While molding-based soft-lithography approach has been extremely successful in preparing various PDMS constructs, some complex… read more here.
Keywords: polydimethylsiloxane pdms; young modulus; rate; pdms ... See more keywords
Monocrystalline Quartz ICP Etching: Road to High-Temperature Dry Etching
Sign Up to like & getrecommendations! Published in 2019 at "Plasma Chemistry and Plasma Processing"
DOI: 10.1007/s11090-019-10025-6
Abstract: In this study, the dry plasma-chemical etching process of monocrystalline SiO 2 (quartz) in a fluoride-based (sulfur hexafluoride, SF 6 ) inductively coupled plasma (ICP) was investigated. The etching rate ( V etch ) dependencies… read more here.
Keywords: icp; temperature; quartz; etch ... See more keywords
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0138736
Abstract: In this study, we dry etched SiO2-masked (001) β-Ga2O3 substrates in HCl gas flow at a high temperature without plasma excitation. The etching was done selectively in window areas to form holes or trenches with… read more here.
Keywords: hcl gas; ga2o3 substrates; 001 ga2o3; dry etching ... See more keywords
Defect-selective dry etching for quick and easy probing of hexagonal boron nitride domains.
Sign Up to like & getrecommendations! Published in 2018 at "Nanotechnology"
DOI: 10.1088/1361-6528/aaa933
Abstract: In this study, we demonstrate a new method to selectively etch the point defects or the boundaries of as-grown hexagonal boron nitride (hBN) films and flakes in situ on copper substrates using hydrogen and argon… read more here.
Keywords: microscopy; defect selective; boron nitride; hexagonal boron ... See more keywords
Understanding the effect of dry Etching on Nanoscale Phase-Change Memory.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/ab4079
Abstract: PCM (phase-change memory) is an important class of data storage, operating based on the Joule heating-induced reversible switching of chalcogenide alloys. Nanoscale PCM often requires advanced microfabrication techniques such as dry (plasma) etching, but the… read more here.
Keywords: effect dry; phase change; change memory; change ... See more keywords
Fabrication of germanium tin microstructures through inductively coupled plasma dry etching
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Transactions on Nanotechnology"
DOI: 10.1109/tnano.2021.3115509
Abstract: Germanium tin (GeSn) with a Sn content of >12% has a great potential for optoelectronic devices due to its direct bandgap property. In this work, the anisotropic etching of GeSn with Sn content of 12.5%… read more here.
Keywords: plasma; gesn; dry etching; germanium tin ... See more keywords
Micro-profiling of 4H-SiC by Dry Etching to Form a Schottky Barrier Diode
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620010108
Abstract: Abstract Methods of micro-profiling of 4 H -SiC are described: formation of mesa structures with inclined walls (off-vertical wall inclination angle exceeding 45°) by reactive ion etching; etching of mesa structures with a flat bottom… read more here.
Keywords: profiling sic; micro profiling; form schottky; etching form ... See more keywords
Selective Wet and Dry Etching of NiO over β-Ga2O3
Sign Up to like & getrecommendations! Published in 2022 at "ECS Journal of Solid State Science and Technology"
DOI: 10.1149/2162-8777/ac94a0
Abstract: Patterning of NiO/Ga2O3 heterojunctions requires development of selective wet and dry etch processes. Solutions of 1:4 HNO3:H2O exhibited measurable etch rates for NiO above 40°C and activation energy for wet etching of 172.9 kJ.mol-1 (41.3… read more here.
Keywords: selective wet; wet dry; dry etching; etching nio ... See more keywords
Effects of Mask Material on Lateral Undercut of Silicon Dry Etching
Sign Up to like & getrecommendations! Published in 2023 at "Micromachines"
DOI: 10.3390/mi14020306
Abstract: The silicon etching process is a core component of production in the semiconductor industry. Undercut is a nonideal effect in silicon dry etching. A reduced undercut is desired when preparing structures that demand a good… read more here.
Keywords: effect; mask; dry etching; silicon ... See more keywords
High-Quality Dry Etching of LiNbO3 Assisted by Proton Substitution through H2-Plasma Surface Treatment
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12162836
Abstract: The exceptional material properties of Lithium Niobate (LiNbO3) make it an excellent material platform for a wide range of RF, MEMS, phononic and photonic applications; however, nano-micro scale device concepts require high fidelity processing of… read more here.
Keywords: surface; plasma; treatment; high quality ... See more keywords