Origin of temperature dependent conduction of current from n-4H-SiC into silicon dioxide films at high electric fields
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DOI: 10.1063/1.5006249
Abstract: The conduction of current from n-4H-SiC into pyrogenic and dry oxidized films is studied. Anomalous current conduction was observed at a high electric field above 8 MV/cm for dry oxidized metal-oxide-semiconductor (MOS) capacitors, which cannot be… read more here.
Keywords: conduction current; dry oxidized; temperature dependent; current sic ... See more keywords