Effect of the AlGaN/GaN Schottky barrier diodes combined with a dual anode metal and a p-GaN layer on reverse breakdown and turn-on voltage
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DOI: 10.1016/j.mssp.2018.10.013
Abstract: Abstract AlGaN/GaN Schottky barrier diodes (SBDs) combined with a dual anode metal (ohmic and Schottky contacts) and a p-GaN layer were studied for improving the reverse breakdown voltage (VBR) and reducing the turn-on voltage (VON).… read more here.
Keywords: combined dual; anode metal; voltage; gan layer ... See more keywords