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Published in 2020 at "Silicon"
DOI: 10.1007/s12633-020-00856-w
Abstract: In this study, we present an ambipolar conduction and RF stability performance for a Germanium Source Dual Halo Dual Dielectric Triple Material Surrounding Gate Tunnel FET (Ge(SRC)-DH-DD-TM-SG-TFET). The energy band diagram of the device will…
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Keywords:
dual dielectric;
stability;
germanium source;
halo ... See more keywords