Dual-Drain GaN Magnetic Sensor Compatible With GaN RF Power Technology
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DOI: 10.1109/led.2018.2816164
Abstract: This letter presents first-ever fabricated GaN split-current magnetic sensor device. Device operation and key manufacturing steps are also presented. The measured relative current sensitivity is constant at 14 % T−1 for wide mT range of… read more here.
Keywords: gan magnetic; dual drain; drain gan; magnetic sensor ... See more keywords