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Published in 2018 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201800381
Abstract: R.P. and A.M.F. contributed equally to this work. R.P. acknowledges support from the Marie Curie Cofund, Beatriu de Pinos Fellowship (AGAUR 2014 BP‐A 00094). A.M.F. acknowledges a postdoctoral fellowship support from the Natural Sciences and…
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Keywords:
gate organic;
dual gate;
effect transistor;
organic field ... See more keywords
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Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100223
Abstract: Monitoring dissolved oxygen is essential to marine research, but the high redox potentials required to drive sensing reactions have posed an ongoing instability issue in the sensors. Here, a novel dual‐gate configuration for organic electrochemical…
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Keywords:
gate;
electrochemical transistors;
transistors marine;
gate organic ... See more keywords
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1
Published in 2018 at "Microsystem Technologies"
DOI: 10.1007/s00542-018-4018-8
Abstract: In this paper, we present two silicon-on-insulator tunnel field-effect transistors (SOI-TFETs), referred as a lateral dual-gate TFET and a lateral triple-gate TFET, which consist of one or two vertical thin vertical dielectric layers within the original front-gate…
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Keywords:
gate tfet;
triple gate;
gate;
gate triple ... See more keywords
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1
Published in 2018 at "Journal of Materials Engineering and Performance"
DOI: 10.1007/s11665-018-3144-x
Abstract: The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply…
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Keywords:
tfet;
modeling dual;
dual gate;
gate material ... See more keywords
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1
Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00220-7
Abstract: The evolution of integrated circuit is based on the miniaturization of dimension in the transistor Mosfet, this reduction causes the undesirable effect: short channel effects (SCE) and hot carrier effect, the principal goal is to…
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Keywords:
high dielectric;
gate length;
gate;
effect ... See more keywords
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Published in 2025 at "Nano letters"
DOI: 10.1021/acs.nanolett.5c01059
Abstract: Amorphous oxide semiconductors (AOSs) have attracted considerable attention because of their high carrier density, low thermal budget, and large bandgap. However, the high electron density in AOSs hinders their ability to turn off effectively, resulting…
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Keywords:
igo tfts;
high performance;
performance;
performance atomic ... See more keywords
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Published in 2017 at "ACS nano"
DOI: 10.1021/acsnano.7b02986
Abstract: Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor…
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Keywords:
limit;
gate;
dual gate;
detection limit ... See more keywords
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1
Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c07088
Abstract: As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder…
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Keywords:
field effect;
transistor;
dual gate;
carbon ... See more keywords
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1
Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr03676b
Abstract: Recently, disulfiram (DSF), approved by the FDA as an anti-alcoholic drug, has been proved as an effective antitumor drug after chelating with Cu2+. To overcome the shortage of intracellular Cu2+, we have constructed a dual…
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Keywords:
controlled intelligent;
dual gate;
dsf;
intelligent nanoreactor ... See more keywords
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1
Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr05720d
Abstract: Artificial neural networks (ANNs) have strong learning and computing capabilities, and alleviate the problem of high power consumption of traditional von Neumann architectures, providing a solid basis for advanced image recognition, information processing, and low-power…
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Keywords:
field effect;
dual gate;
mos2 field;
gate ... See more keywords
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Published in 2024 at "Journal of Applied Physics"
DOI: 10.1063/5.0188752
Abstract: The investigation of charge carrier transport in state-of-the-art nanoelectronic devices based on III/V semiconductors proves to be challenging, even more so when the highly non-parabolic energy dispersion exhibited by these materials is taken into account.…
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Keywords:
dual gate;
non parabolic;
energy dispersion;
parabolic energy ... See more keywords