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Published in 2018 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.201800381
Abstract: R.P. and A.M.F. contributed equally to this work. R.P. acknowledges support from the Marie Curie Cofund, Beatriu de Pinos Fellowship (AGAUR 2014 BP‐A 00094). A.M.F. acknowledges a postdoctoral fellowship support from the Natural Sciences and…
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Keywords:
gate organic;
dual gate;
effect transistor;
organic field ... See more keywords
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Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100223
Abstract: Monitoring dissolved oxygen is essential to marine research, but the high redox potentials required to drive sensing reactions have posed an ongoing instability issue in the sensors. Here, a novel dual‐gate configuration for organic electrochemical…
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Keywords:
gate;
electrochemical transistors;
transistors marine;
gate organic ... See more keywords
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Published in 2018 at "Microsystem Technologies"
DOI: 10.1007/s00542-018-4018-8
Abstract: In this paper, we present two silicon-on-insulator tunnel field-effect transistors (SOI-TFETs), referred as a lateral dual-gate TFET and a lateral triple-gate TFET, which consist of one or two vertical thin vertical dielectric layers within the original front-gate…
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Keywords:
gate tfet;
triple gate;
gate;
gate triple ... See more keywords
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1
Published in 2018 at "Journal of Materials Engineering and Performance"
DOI: 10.1007/s11665-018-3144-x
Abstract: The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply…
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Keywords:
tfet;
modeling dual;
dual gate;
gate material ... See more keywords
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1
Published in 2019 at "Silicon"
DOI: 10.1007/s12633-019-00220-7
Abstract: The evolution of integrated circuit is based on the miniaturization of dimension in the transistor Mosfet, this reduction causes the undesirable effect: short channel effects (SCE) and hot carrier effect, the principal goal is to…
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Keywords:
high dielectric;
gate length;
gate;
effect ... See more keywords
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Published in 2017 at "ACS nano"
DOI: 10.1021/acsnano.7b02986
Abstract: Dual-gate field-effect biosensors (bioFETs) with asymmetric gate capacitances were shown to surpass the Nernst limit of 59 mV/pH. However, previous studies have conflicting findings on the effect of the capacitive amplification scheme on the sensor…
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Keywords:
limit;
gate;
dual gate;
detection limit ... See more keywords
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Published in 2022 at "ACS Omega"
DOI: 10.1021/acsomega.1c07088
Abstract: As the physical scaling limit of silicon-based integrated circuits is approached, new materials and device structures become necessary. The exclusive-OR (XOR) gate is a basic logic gate performed as a building block for digital adder…
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Keywords:
field effect;
transistor;
dual gate;
carbon ... See more keywords
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Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr03676b
Abstract: Recently, disulfiram (DSF), approved by the FDA as an anti-alcoholic drug, has been proved as an effective antitumor drug after chelating with Cu2+. To overcome the shortage of intracellular Cu2+, we have constructed a dual…
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Keywords:
controlled intelligent;
dual gate;
dsf;
intelligent nanoreactor ... See more keywords
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Published in 2022 at "Nanoscale"
DOI: 10.1039/d2nr05720d
Abstract: Artificial neural networks (ANNs) have strong learning and computing capabilities, and alleviate the problem of high power consumption of traditional von Neumann architectures, providing a solid basis for advanced image recognition, information processing, and low-power…
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Keywords:
field effect;
dual gate;
mos2 field;
gate ... See more keywords
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Published in 2017 at "Nanotechnology"
DOI: 10.1088/1361-6528/aa9173
Abstract: We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier…
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Keywords:
gate;
carrier transport;
dual gate;
carrier ... See more keywords
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2
Published in 2023 at "IEEE Journal of the Electron Devices Society"
DOI: 10.1109/jeds.2023.3265372
Abstract: In this work, dual-gate enhancement-mode (E-mode) device based NAND circuit (DG-NAND) and the NAND block with double E-mode devices (DD-NAND) are developed and fabricated based on the GaN MIS-HEMTs (metal-insulator-semiconductor-high-electron-mobility-transistors) platform. The DG-NAND circuit has…
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Keywords:
dual gate;
mis hemts;
mode device;
gan mis ... See more keywords