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Published in 2017 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-017-5310-6
Abstract: The temperature dependence of an InGaN dual-junction solar cell has been investigated. At different temperatures ranging from 300 K to 450 K, the In0.49Ga0.51N/In0.74Ga0.26N dual-junction solar cell and its subcells were simulated and their electrical parameters calculated.…
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Keywords:
temperature;
junction solar;
dual junction;
solar cell ... See more keywords
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Published in 2019 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2019.05.004
Abstract: Abstract In this paper indium gallium nitride (InGaN) is used to design and optimize a dual junction (DJ) solar cell, which is series-connected via a tunnel diode, with a careful analysis of the current matching…
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Keywords:
in0 48ga0;
48ga0 52n;
current matching;
dual junction ... See more keywords
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Published in 2018 at "IEEE Photonics Journal"
DOI: 10.1109/jphot.2018.2865538
Abstract: The luminescent down-shifting (LDS) effect of a colloidal quantum dot layer on a dual junction solar cell is explored and analyzed. A 5.47% enhancement of power conversion efficiency is recorded when green quantum dots are…
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Keywords:
surface;
lds effect;
quantum dots;
junction ... See more keywords
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Published in 2017 at "Optics express"
DOI: 10.1364/oe.25.00a665
Abstract: A tandem solar cell consisting of a III-V nanowire subcell on top of a planar Si subcell is a promising candidate for next generation photovoltaics due to the potential for high efficiency. However, for success…
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Keywords:
absorption;
array;
iii nanowire;
solar cell ... See more keywords