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Published in 2020 at "Nano letters"
DOI: 10.1021/acs.nanolett.0c01039
Abstract: GeSn offers a reduced bandgap than Ge and has been utilized in Si-based infrared photodetectors with extended cutoff wavelength. However, traditional GeSn/Ge heterostructure usually consists defects like misfit dislocations due to the lattice mismatch issue.…
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Keywords:
photodetector;
dark current;
dual nanowire;
gesn ... See more keywords