The dual-suppression of peak electric field in AlGaN/GaN HEMT with sandwich structure
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DOI: 10.1016/j.spmi.2021.106843
Abstract: Abstract To improve the power and RF performance of the high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructure junction, in this paper, a sandwich structure consisting of gate field plate, SiN passivation layer, and… read more here.
Keywords: algan gan; field; sandwich structure; hemt ... See more keywords