Lattice contraction due to boron doping in silicon
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.07.011
Abstract: Abstract In modern electronic devices, strain is used to increase carrier mobility. It is thus mandatory to know precisely the effect of doping on the lattice parameter of silicon. However, there are many experimental biases… read more here.
Keywords: boron doping; lattice contraction; contraction due; due boron ... See more keywords