Dynamic conductance characteristics in HfOx-based resistive random access memory
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DOI: 10.1039/c7ra00567a
Abstract: Characteristics of HfOx-based resistive switching memory (RRAM) in Al/HfOx/Al and Al/AlOx/HfOx/Al structures were studied using a dynamic conductance method. Step-like RESET behaviors as well as pre- and post-RESET regions of operation were characterized. The results… read more here.
Keywords: dynamic conductance; characteristics hfox; hfox based; based resistive ... See more keywords