Carrier dynamics of InAs quantum dots with GaAs1−xSbx barrier layers
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DOI: 10.1063/1.5003097
Abstract: Photoluminescence properties of InAs/GaAs1−xSbx quantum dots (QDs) are investigated with respect to the Sb-composition of x = 0, 0.15, and 0.25. The QDs demonstrate a type-II band alignment for x = 0.15 and 0.25. In contrast, with well-defined InAs/GaAs… read more here.
Keywords: inas gaas1; carrier dynamics; dynamics inas; carrier ... See more keywords