Carrier Dynamics in InGaN/GaN on the Basis of Different In Concentrations
Sign Up to like & getrecommendations! Published in 2019 at "Applied Sciences"
DOI: 10.20944/preprints201903.0253.v1
Abstract: InGaN/GaN samples grown on c-plane sapphire substrate with different In concentrations by metal organic chemical vapor deposition are demonstrated. The subsequent capping GaN layer growth opens a possibility for dislocation reduction due to the lateral… read more here.
Keywords: carrier dynamics; ingan layers; dynamics ingan; ingan gan ... See more keywords