Carbon-hydrogen defects with a neighboring oxygen atom in n-type Si
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DOI: 10.1063/1.4993934
Abstract: We report on the electrical activation of neutral carbon-oxygen complexes in Si by wet-chemical etching at room temperature. Two deep levels, E65 and E75, are observed by deep level transient spectroscopy in n-type Czochralski Si.… read more here.
Keywords: oxygen; carbon; carbon hydrogen; type ... See more keywords