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Published in 2019 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2018.11.033
Abstract: Abstract N-type Mg2Si single crystal ingot has been successfully grown by the Vertical Bridgman technique. The Hall Effect measurement at RT revealed a moderate Hall mobility (~ 446 cm2/Vs), electrical resistivity (~ 1.4 Ω. cm) and carrier…
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Keywords:
mg2si;
type mg2si;
ecofriendly mg2si;
wavelength ... See more keywords