Low-Temperature and Low-Pressure Silicon Nitride Deposition by ECR-PECVD for Optical Waveguides
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DOI: 10.3390/app11052110
Abstract: We report on low-temperature and low-pressure deposition conditions of 140 ◦C and 1.5 mTorr, respectively, to achieve high-optical quality silicon nitride thin films. We deposit the silicon nitride films using an electron cyclotron resonance plasma-enhanced… read more here.
Keywords: silicon nitride; temperature low; ecr pecvd; silicon ... See more keywords