ECV Doping Profile Measurements in Silicon Using Conventional Potentiostat
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DOI: 10.1007/s11664-018-6670-2
Abstract: Formation of p–n junctions by phosphorus diffusion from liquid dopant in Si was investigated using a custom-built procedure for performing electrochemical capacitance–voltage (ECV) measurements. The feasibility of using a potentiostat equipped with an impedance module… read more here.
Keywords: ecv; potentiostat; doping profile; profile measurements ... See more keywords