Atomistic understanding of the lateral growth of graphene from the edge of an h-BN domain: towards a sharp in-plane junction.
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DOI: 10.1039/c6nr09962a
Abstract: The in-plane combination of graphene (G) and hexagonal-boron nitride (h-BN) leads to lateral h-BN/G heterostructures, which are promising candidates for novel two-dimensional electronics. The quality of the interface between G and h-BN domains is crucial… read more here.
Keywords: growth graphene; graphene; edge; edge domain ... See more keywords