Spatial Control of Substitutional Dopants in Hexagonal Monolayer WS2 : The Effect of Edge Termination.
Sign Up to like & getrecommendations! Published in 2023 at "Small"
DOI: 10.1002/smll.202205800
Abstract: The ability to control the density and spatial distribution of substitutional dopants in semiconductors is crucial for achieving desired physicochemical properties. Substitutional doping with adjustable doping levels has been previously demonstrated in 2D transition metal dichalcogenides… read more here.
Keywords: substitutional dopants; control; distribution; edge termination ... See more keywords
High-permittivity dielectric edge termination for vertical high voltage devices
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Computational Electronics"
DOI: 10.1007/s10825-020-01553-y
Abstract: A novel edge-termination concept using extreme permittivity dielectrics is proposed to effectively manage electric fields in vertical power-devices. This method is expected to be particularly significant for wide band-gap semiconductors, where field termination is a… read more here.
Keywords: high permittivity; permittivity dielectric; termination; edge termination ... See more keywords
Investigation on 4H SiC MOSFET with three-section edge termination
Sign Up to like & getrecommendations! Published in 2018 at "Superlattices and Microstructures"
DOI: 10.1016/j.spmi.2018.10.018
Abstract: Abstract SiC MOSFET with three-section edge termination is investigated in this paper. The edge termination for SiC MOSFET is divided into three sections with different field limited rings and the space between rings, which benefits… read more here.
Keywords: sic mosfet; mosfet three; edge termination;
Uniform and High Gain GaN p-i-n Ultraviolet APDs Enabled by Beveled-Mesa Edge Termination
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Photonics Technology Letters"
DOI: 10.1109/lpt.2020.3025290
Abstract: In this letter, a beveled-mesa edge termination technology was developed to improve the performance of GaN p-i-n ultraviolet avalanche photodiodes (APDs). Simulation results showed that the beveled-mesa is effective in reduction of the electric field… read more here.
Keywords: beveled mesa; apds; mesa edge; edge termination ... See more keywords
Edge Termination With Enhanced Field-Limiting Rings Insensitive to Surface Charge for High-Voltage SiC Power Devices
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2992577
Abstract: An edge termination structure with enhanced field-limiting rings (enhanced FLRs) is proposed to stabilize the breakdown voltage against the surface charge. The pitches of the enhanced rings are designed to mitigate the electric field and… read more here.
Keywords: voltage; field; edge termination; surface charge ... See more keywords
Edge-Termination Technique for High-Voltage Mesa-Structure 4H-SiC Devices: Negative Beveling
Sign Up to like & getrecommendations! Published in 2020 at "Semiconductors"
DOI: 10.1134/s1063782620020153
Abstract: The prospects for the protection of high-voltage 4H-SiC-devices from edge breakdown via the formation of mesa structures with inclined walls (negative beveling) are considered. Numerical simulation of the spatial electric-field distribution in high-voltage (~1500V) reverse-biased… read more here.
Keywords: high voltage; sic devices; negative beveling; edge termination ... See more keywords