Oxide Edge Trap Density Extraction in Silicon Nanowire MOSFET From Tunnel Current Noise Measurement in Gated Diode Like Arrangement
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DOI: 10.1109/tdmr.2020.3000356
Abstract: Edge traps in the gate oxide of silicon nanowire MOSFETs have been extracted from tunnel current noise measurement in a gated diode like arrangement. We have found that, low frequency noise in tunnel current results… read more here.
Keywords: density; current noise; noise; edge trap ... See more keywords