Model of the Effect of the Gate Bias on MOS Structures under Ionizing Radiation
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DOI: 10.1134/s1063782620020025
Abstract: Abstract A new quantitative model of the effect of the gate bias on the threshold voltage of metal-oxide-semiconductor (MOS) structures under ionizing irradiation is developed based on the consideration of hole trapping from the entire… read more here.
Keywords: gate bias; model effect; gate; effect gate ... See more keywords
Proximity Effect in Gate Fabrication Using Photolithography Technique
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DOI: 10.15598/aeee.v15i2.2024
Abstract: In the paper the technological factors influencing test structure gate length were described. The influence of test structure gate placement (Schottky metallization between ohmic contacts, on mesa and on GaN surface) was analyzed and discussed.… read more here.
Keywords: gate fabrication; gate; effect gate; test ... See more keywords