Investigation on Current Crowding Effect in IGBTs
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DOI: 10.1109/ted.2017.2782705
Abstract: This paper investigates the influences of various topside cell structures of insulated gate bipolar transistor (IGBT) on the current crowding effect during high current turn-OFF by symmetrical multicell numerical simulations. It is observed that lower… read more here.
Keywords: current crowding; effect igbts; investigation current; crowding effect ... See more keywords