The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices.
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DOI: 10.1021/acs.nanolett.3c00085
Abstract: Hafnium oxide (HfO2)-based ferroelectric tunnel junctions (FTJs) have been extensively evaluated for high-speed and low-power memory applications. Herein, we investigated the influence of Al content in HfAlO thin films on the ferroelectric characteristics of HfAlO-based… read more here.
Keywords: doping effect; effect intrinsic; ferroelectricity; hafnium oxide ... See more keywords