Effect of Microindentation on Electroluminescence of SiC P-I-N Junctions
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DOI: 10.3390/ma15020534
Abstract: The influence of microindentation on the electroluminescence of silicon carbide was studied in forward-biased 4H SiC p-i-n junctions. Four spectral regions at approximately 390, 420, 445 and 500 nm initially observed on virgin samples strongly… read more here.
Keywords: effect microindentation; electroluminescence sic; sic junctions; microindentation electroluminescence ... See more keywords