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Published in 2023 at "Materials"
DOI: 10.3390/ma16031104
Abstract: Here, we report on the epitaxial growth of GaN on patterned SiO2-covered cone-shaped patterned sapphire surfaces (PSS). Physical vapor deposition (PVD) AlN films were used as buffers deposited on the SiO2-PSS substrates. The gallium nitride…
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Keywords:
growth;
patterned sapphire;
microscopy;
effect nitridation ... See more keywords