Annealing effect on threading dislocations in a GaN grown on Si substrate
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DOI: 10.1016/j.jcrysgro.2017.01.001
Abstract: Abstract Effect of rapid thermal annealing (RTA) on crystal defects in a GaN layer grown on a (111)Si substrate was investigated by photoluminescence (PL) and transmission electron microscopy (TEM) analyses. The PL spectra suggested that… read more here.
Keywords: annealing effect; effect; dislocations gan; effect threading ... See more keywords