Study of neutron irradiation effects in Depleted CMOS detector structures
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DOI: 10.1088/1748-0221/17/03/p03030
Abstract: In this paper the results of Edge-TCT and I-V measurements with passive test structures made in LFoundry 150 nm HV-CMOS process on p-type substrates with different initial resistivities ranging from 0.5 to 3 kΩcm are… read more here.
Keywords: effects depleted; depleted cmos; detector; neutron irradiation ... See more keywords