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Published in 2018 at "Applied Physics Letters"
DOI: 10.1063/1.5022590
Abstract: Here, hydrogenated diamond (H-diamond) NOR logic circuits composed of two p-type enhancement-mode (E-mode) metal-oxide-semiconductor field-effect-transistors (MOSFETs) and a load resistor are fabricated and characterized. The fabrication process and the annealing effect on the electrical properties…
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Keywords:
effects hydrogenated;
logic circuits;
diamond;
annealing effects ... See more keywords