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Published in 2018 at "Semiconductor Science and Technology"
DOI: 10.1088/1361-6641/aaec45
Abstract: A comparative investigation on the effects of sacrificial oxidation (SO) on the surface properties of n- and p-type 4H-SiC has been conducted by using x-ray photoelectron spectroscopy and deep level transient spectroscopy. For n-type 4H-SiC,…
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Keywords:
type sic;
surface;
spectroscopy;
effects sacrificial ... See more keywords