Physics of Efficiency Droop in GaN:Eu Light-Emitting Diodes
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DOI: 10.1038/s41598-017-17033-6
Abstract: The internal quantum efficiency (IQE) of an electrically-driven GaN:Eu based device for red light emission is analyzed in the framework of a current injection efficiency model (CIE). The excitation path of the Eu+3 ion is… read more here.
Keywords: droop gan; physics efficiency; efficiency droop; physics ... See more keywords
Thermal and efficiency droop in InGaN/GaN light-emitting diodes: decoupling multiphysics effects using temperature-dependent RF measurements
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DOI: 10.1038/s41598-019-56390-2
Abstract: Multiphysics processes such as recombination dynamics in the active region, carrier injection and transport, and internal heating may contribute to thermal and efficiency droop in InGaN/GaN light-emitting diodes (LEDs). However, an unambiguous methodology and characterization… read more here.
Keywords: methodology; temperature; thermal efficiency; efficiency droop ... See more keywords
Low-efficiency-droop c-plane InGaN/GaN light-emitting diodes through the use of thick single quantum wells and doped barriers
Sign Up to like & getrecommendations! Published in 2023 at "Journal of Applied Physics"
DOI: 10.1063/5.0142035
Abstract: Efficiency droop at high current densities is a problem for InGaN-based light-emitting diodes (LEDs), especially for conventional c-plane devices. The large internal electric fields in c-plane quantum wells (QWs) lead to an increase in the… read more here.
Keywords: quantum; plane; efficiency; doped barriers ... See more keywords
Toward Ultra-Low Efficiency Droop in C-Plane Polar InGaN Light-Emitting Diodes by Reducing Carrier Density with a Wide InGaN Last Quantum Well
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DOI: 10.3390/app9153004
Abstract: We demonstrate an ultra-low efficiency droop in c-plane polar InGaN blue light-emitting diodes (LEDs) by reducing the carrier density using a wide InGaN last quantum well (LQW). It is found that the LEDs with a… read more here.
Keywords: efficiency droop; carrier density; density; ingan ... See more keywords
Very Low-Efficiency Droop in 293 nm AlGaN-Based Light-Emitting Diodes Featuring a Subtly Designed p-Type Layer
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DOI: 10.3390/molecules27217596
Abstract: This paper reports an AlGaN-based ultraviolet-B light-emitting diode (UVB-LED) with a peak wavelength at 293 nm that was almost free of efficiency droop in the temperature range from 298 to 358 K. Its maximum external… read more here.
Keywords: light emitting; efficiency; droop; algan based ... See more keywords