Boosting the efficiency of InGaN-based green LEDs grown on Si through buffer strain engineering
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DOI: 10.1063/5.0218897
Abstract: InGaN-based micro-light-emitting diodes (LEDs) grown on Si have gained tremendous interest for full-color displays. Strain management is a key challenge for the epitaxial growth of InGaN-based long-wavelength LEDs on Si because the accumulated compressive strain… read more here.
Keywords: efficiency; efficiency ingan; leds grown; ingan based ... See more keywords
On the effect of ballistic overflow on the temperature dependence of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes
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DOI: 10.1134/s1063782617020166
Abstract: The dependences of the quantum efficiency of InGaN/GaN multiple quantum well light-emitting diodes on the temperature and excitation level are studied. The experiment is performed for two luminescence excitation modes. A comparison of the results… read more here.
Keywords: quantum; temperature; quantum efficiency; light emitting ... See more keywords