High internal quantum efficiency ZnO/ZnMgO multiple quantum wells prepared on GaN/sapphire templates for ultraviolet light emitting diodes
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DOI: 10.1039/c9tc01421g
Abstract: Dramatically reduced edge threading dislocations and a record IQE of 61% are obtained for ZnO/Zn0.9Mg0.1O MQWs by using GaN/Al2O3 as substrates. read more here.
Keywords: quantum efficiency; internal quantum; zno znmgo; high internal ... See more keywords