Rectification Ratio and Tunneling Decay Coefficient Depend on the Contact Geometry Revealed by in Situ Imaging of the Formation of EGaIn Junctions.
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DOI: 10.1021/acsami.9b02033
Abstract: This paper describes how the intensive (tunneling decay coefficient β and rectification ratio R) and extensive (current density J) properties of Ag-S(CH2) n-1CH3//GaO x/EGaIn junctions ( n = 10, 14, 18) and molecular diodes of… read more here.
Keywords: egain; decay coefficient; egain junctions; rectification ratio ... See more keywords