Electrical compensation and cation vacancies in Al rich Si-doped AlGaN
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DOI: 10.1063/5.0016494
Abstract: We report positron annihilation results on vacancy defects in Si-doped Al0.90Ga0.10N alloys grown by metalorganic vapor phase epitaxy. By combining room temperature and temperature-dependent Doppler broadening measurements, we identify negatively charged in-grown cation vacancies in… read more here.
Keywords: cation; rich doped; compensation cation; electrical compensation ... See more keywords
High-temperature annealing induced electrical compensation in UID and Sn doped β-Ga2O3 bulk samples: The role of VGa–Sn complexes
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DOI: 10.1063/5.0249111
Abstract: By electron paramagnetic resonance (EPR) and photoluminescence spectroscopy, we have investigated the effect of high-temperature annealing under oxygen atmosphere on the electrical and defect properties of unintentionally doped (UID) and highly doped (Sn) n-type bulk… read more here.
Keywords: bulk samples; vga; electrical compensation; temperature annealing ... See more keywords