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Published in 2018 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2018.2860948
Abstract: The electrical parameters degradations of a radio frequency lateral-diffused metal–oxide–semiconductor transistor under switch-OFF avalanche breakdown stress have been first experimentally investigated. A modified three-port dc-IV method is proposed to demonstrate the degradation mechanisms. It shows…
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Keywords:
induced electrical;
avalanche breakdown;
switch avalanche;
electrical degradations ... See more keywords