Electrically motivated atomic migration and defect formation in Bi0.5Sb1.5Te3 compounds
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DOI: 10.1016/j.matchemphys.2017.10.072
Abstract: Abstract Current-induced Ag migration behavior and defect formation mechanism in p-type Bi0.5Sb1.5Te3 (BST) compounds are investigated. By applying an electric current of 170 A/cm2 through a hot-pressed BST at 150 °C with one side attached to… read more here.
Keywords: bi0 5sb1; 5sb1 5te3; migration; defect formation ... See more keywords