Exchange of ions across TiN/TaOx interface during electro-formation of TaOx-based resistive switching devices.
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DOI: 10.1021/acsami.0c06960
Abstract: Valence Change Model describes the resistive switching in metal oxides-based devices as due to electro-reduction of the oxide and subsequent electro-migration of oxygen vacancies. Here we present cross-sectional X-Ray Energy Dispersive Spectroscopy elemental maps of… read more here.
Keywords: electro formation; tin; exchange; taox ... See more keywords