All‐Transfer Electrode Interface Engineering Toward Harsh‐Environment‐Resistant MoS2 Field‐Effect Transistors
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DOI: 10.1002/adma.202210735
Abstract: Nanoscale electronic devices that can work in harsh environments are in high demand for wearable, automotive, and aerospace electronics. Clean and defect‐free interfaces are of vital importance for building nanoscale harsh‐environment‐resistant devices. However, current nanoscale… read more here.
Keywords: harsh environment; electrode channel; mos2; environment resistant ... See more keywords