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Published in 2022 at "ChemSusChem"
DOI: 10.1002/cssc.202200474
Abstract: The conventional thermal method of preparing hafnium alkoxides [Hf(OR) 4 , R is alkyl]-excellent precursors for gate-dielectric HfO 2 on semiconductors-was severely hindered by its unsatisfactory environment and economy burdens. Herein, we proposed a promising…
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Keywords:
coupled hafnium;
electrodissolution;
synthesis;
electrodissolution coupled ... See more keywords