Mapping 1D Confined Electromagnetic Edge States in 2D Monolayer Semiconducting MoS2 Using 4D-STEM.
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DOI: 10.1021/acsnano.2c01170
Abstract: Four-dimensional (4D) scanning transmission electron microscopy is used to study the electric fields at the edges of 2D semiconducting monolayer MoS2. Sub-nanometer 1D features in the 2D electric field maps are observed at the outermost… read more here.
Keywords: electric field; electromagnetic edge; microscopy; edge states ... See more keywords