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Published in 2017 at "Measurement"
DOI: 10.1016/j.measurement.2016.09.020
Abstract: Abstract In this paper, a fast and systematic experimental technique is proposed, which is devoted to the performance evaluation of power spectral density non-parametric estimators, in the framework of 1/f-noise bias-varying investigation at the ports…
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Keywords:
experimental technique;
electron devices;
performance evaluation;
investigation ... See more keywords
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Published in 2019 at "Nano Energy"
DOI: 10.1016/j.nanoen.2018.10.051
Abstract: Abstract There are currently extensive interests on the hot-electron-mediated photoconversion. However, the device quantum yield is fundamentally low due to the existences of various hot-electron loss channels; moreover, the nanostructured plasmonic/metamaterial are generally required, which…
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Keywords:
photoconversion;
hot electron;
electron;
loss mechanisms ... See more keywords
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Published in 2019 at "Physical Review B"
DOI: 10.1103/physrevb.99.155412
Abstract: An intrinsic electron injection model for linear band two-dimensional (2D) materials, like graphene, is presented and its coupling to a recently developed quantum time-dependent Monte Carlo simulator for electron devices, based on the use of…
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Keywords:
monte carlo;
electron;
band;
electron devices ... See more keywords
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Published in 2020 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2020.3006948
Abstract: It is my great pleasure to announce the winner of the 2019 Electron Devices Society George E. Smith Award given to a letter published in the IEEE Electron Device Letters (EDL) in 2019. The selection…
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Keywords:
society george;
devices society;
electron devices;
george smith ... See more keywords
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Published in 2021 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2021.3049229
Abstract: The traditional transmission coefficient present in the original Landauer formulation, which is valid for quasi-static scenarios with working frequencies below the inverse of the electron transit time, is substituted by a novel time-dependent displacement current…
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Keywords:
tunneling electron;
time;
transit time;
electron devices ... See more keywords
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Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2970394
Abstract: Layered van der Waals (vdW) semiconductors have emerged as preferred materials for building next-generation electronic devices, such as diodes and field-effect transistors (FETs), because of their capability of providing high mobility at the nanometer-scale thickness,…
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Keywords:
der waals;
van der;
based electron;
transport anisotropy ... See more keywords
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Published in 2023 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2023.3268629
Abstract: RF source scientist and engineers continuously push the envelope with new designs, striving for improved performance with higher efficiency, higher frequency, greater bandwidth, increased gain, smaller size, lower voltage, and myriad other parameters required for…
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Keywords:
devices advanced;
vacuum electron;
fabrication vacuum;
fabrication ... See more keywords
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Published in 2018 at "IEEE Transactions on Microwave Theory and Techniques"
DOI: 10.1109/tmtt.2018.2873362
Abstract: Metallic helically corrugated structures play an important role in microwave vacuum electron devices serving as wave converters, wave compressors, and interaction circuits. Thermal analysis of such structures operating in a high-power regime is important for…
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Keywords:
approach thermal;
thermal analysis;
analysis;
vacuum electron ... See more keywords