An analytical model for the electron effective mobility in a strained silicon inversion layer
Sign Up to like & getrecommendations! Published in 2018 at "Chinese Journal of Physics"
DOI: 10.1016/j.cjph.2018.05.029
Abstract: Abstract An electron effective mobility analytical model without empirical parameters is investigated for the strained silicon inversion layer, which can be conveniently applied by device and circuit designers. Four kinds of scattering mechanisms, i.e., coulomb… read more here.
Keywords: effective mobility; mobility; electron effective; inversion layer ... See more keywords
Electron effective attenuation length in epitaxial graphene on SiC.
Sign Up to like & getrecommendations! Published in 2019 at "Nanotechnology"
DOI: 10.1088/1361-6528/aae7ec
Abstract: The inelastic mean free path (IMFP) for carbon-based materials is notoriously challenging to model, and moving from bulk materials to 2D materials may exacerbate this problem, making the accurate measurements of IMFP in 2D carbon… read more here.
Keywords: electron effective; attenuation length; graphene; effective attenuation ... See more keywords